hexfet ? power mosfet fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 5/29/01 so-8 v dss = 20v r ds(on) = 0.029 w irf7311 description symbol maximum units drain-source voltage v ds 20 gate-source voltage v gs 12 t a = 25c 6.6 t a = 70c 5.3 pulsed drain current i dm 26 continuous source current (diode conduction) i s 2.5 t a = 25c 2.0 t a = 70c 1.3 single pulse avalanche energy ? e as 100 mj avalanche current i ar 4.1 a repetitive avalanche energy e ar 0.20 mj peak diode recovery dv/dt ? dv/dt 5.0 v/ ns junction and storage temperature range t j, t stg -55 to + 150 c thermal resistance ratings parameter symbol limit units maximum junction-to-ambient ? r q ja 62.5 c/w absolute maximum ratings ( t a = 25c unless otherwise noted) continuous drain current ? maximum power dissipation ? a i d p d v w d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 l generation v technology l ultra low on-resistance l dual n-channel mosfet l surface mount l fully avalanche rated pd - 91435c
irf7311 parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.72 1.0 v t j = 25c, i s = 1.7a, v gs = 0v ? t rr reverse recovery time CCC 52 77 ns t j = 25c, i f = 1.7a q rr reverse recoverycharge CCC 58 86 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC 26 2.5 a s d g ? surface mounted on 1 in square cu board ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 4.1a, di/dt 92a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 12mh r g = 25 w , i as = 4.1a. ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.027 CCC v/c reference to 25c, i d = 1ma CCC 0.023 0.029 v gs = 4.5v, i d = 6.0a ? CCC 0.030 0.046 v gs = 2.7v, i d = 5.2a ? v gs(th) gate threshold voltage 0.7 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance CCC 20 CCC s v ds = 10v, i d = 6.0a CCC CCC 1.0 v ds = 16v, v gs = 0v CCC CCC 5.0 v ds = 16v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC 100 v gs = 12v gate-to-source reverse leakage CCC CCC -100 v gs = -12v q g total gate charge CCC 18 27 i d = 6.0a q gs gate-to-source charge CCC 2.2 3.3 nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 6.2 9.3 v gs = 4.5v, see fig. 10 ? t d(on) turn-on delay time CCC 8.1 12 v dd = 10v t r rise time CCC 17 25 i d = 1.0a t d(off) turn-off delay time CCC 38 57 r g = 6.0 w t f fall time CCC 31 47 r d = 10 w ? c iss input capacitance CCC 900 CCC v gs = 0v c oss output capacitance CCC 430 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 200 CCC ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
irf7311 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 1 10 100 0.1 1 10 20 s pulse width t = 25 c j top bottom vgs 7.50v 4.50v 4.00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0.1 1 10 20 s pulse width t = 150 c j top bottom vgs 7.50v 4.50v 4.00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 1.5 2.0 2.5 3.0 v = 10v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7311 fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 5. normalized on-resistance vs. temperature r ds (on) , drain-to-source on resistance ( w ) r ds (on) , drain-to-source on resistance ( w ) 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.8a 3.3a 4.1a -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 6.0a 0.01 0.02 0.03 0.04 0.05 02468 a gs v , gate-to-source volta g e ( v ) i = 6.6a d 0.020 0.024 0.028 0.032 0 102030 a i , drain current ( a ) d v = 4.5v gs v = 2.7v gs
irf7311 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage 0 400 800 1200 1600 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs i = d 6.0a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
irf7311 so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l ine conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimensioning & t olerancing per as me y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dimensions are shown in millimeters [inches ]. 5 dime ns ion doe s not incl ude mol d prot r us ions . 6 dime ns ion doe s not incl ude mol d prot r us ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimension is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
irf7311 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conform s to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/01
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